학술논문
A 32nm 0.5V-supply dual-read 6T SRAM
Document Type
Conference
Author
Source
IEEE Custom Integrated Circuits Conference 2010 Custom Integrated Circuits Conference (CICC), 2010 IEEE. :1-4 Sep, 2010
Subject
Language
ISSN
0886-5930
2152-3630
2152-3630
Abstract
Dual read port SRAMs play a critical role in high performance cache designs, but stability and sensing challenges typically limit the low voltage operation. We report a high-performance dual read port 8-way set associative 6T SRAM with a one clock cycle access latency, in a 32nm metal-gate partially depleted (PD) SOI technology, for low-voltage applications. Hardware exhibits robust operation at 348MHz and 0.5V with a read and write power of 3.33 and 1.97mW, respectively, per 4.5KB active array with both read ports accessed at the highest activity data pattern. At a 0.6V supply, an access speed of 1.2GHz is observed.