학술논문

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

Document Type

Conference

Author

Chevalier, P.; Lacave, T.; Canderle, E.; Pottrain, A.; Carminati, Y.; Rosa, J.; Pourchon, F.; Derrier, N.; Avenier, G.; Montagné, A.; Balteanu, A.; Dacquay, E.; Sarkas, I.; Céli, D.; Gloria, D.; Gaquière, C.; Voinigescu, S. P.; Chantre, A.

Source

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE. :1-4 Oct, 2012

Subject

Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Silicon germanium
Heterojunction bipolar transistors
Noise measurement
BiCMOS integrated circuits
Frequency measurement
Ring oscillators

Language

ISSN

1550-8781
2374-8443

Abstract

This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along with CML ring oscillators and circuit results up to the D band.

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