학술논문
Engineering the kinetics of redox-based memristive devices for neuromorphic computing
Document Type
Conference
Author
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
For neuromorphic computing applications, analog programming characteristics with linear updates are highly desirable. Here, we discuss the relation between the switching dynamics of redox-based memristive devices and their analog programming capability. We identity three groups of devices based on the valence change mechanism with characteristic properties. Experimental results and theoretical considerations suggest that analog switching can be achieved if a thermal runaway is avoided. Moreover, we argue that internal series resistances play a crucial role in controlling the runaway and determining the accessible resistance window.