학술논문
Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet
Document Type
Conference
Author
Source
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2021 21th European Conference. :1-5 Sep, 2021
Subject
Language
ISSN
1609-0438
Abstract
Lackner’s theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner’s impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements.