학술논문
Radio frequency transistors and circuit applications based on CVD MoS2
Document Type
Conference
Author
Source
2015 73rd Annual Device Research Conference (DRC) Device Research Conference (DRC), 2015 73rd Annual. :215-216 Jun, 2015
Subject
Language
ISSN
1548-3770
Abstract
Molybdenum disulfide (MoS 2 ), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ∼1.8 eV for single layers. Its bandgap allows for high I on /I off metal-oxide semiconducting field-effect transistors (FETs). Exfoliated monolayer MoS 2 FETs exhibit current saturation with on-state current densities of 300 µA/µm, as well as transconductances exceeding 40 µS/µm [1]. These properties make MoS 2 a desirable candidate for radio frequency (RF) applications [1, 2, 3]. However, in order for MoS 2 devices to move from laboratory experimentations to industrial scale applications, large area synthesis of high quality material is needed. Here we demonstrate gigahertz RF performance and circuits (amplifier and mixer) using chemical vapor deposited (CVD) monolayer MoS 2 FETs.