학술논문
EKV compact model extension for HV lateral DMOS transistors
Document Type
Conference
Author
Source
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Advanced semiconductor devices and microsystems Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on. :345-348 2002
Subject
Language
Abstract
This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.