학술논문
Capacitor-less 1-transistor DRAM
Document Type
Conference
Author
Source
2002 IEEE International SOI Conference SOI conference SOI Conference, IEEE International 2002. :10-13 2002
Subject
Language
Abstract
We review the current status of the 1T-DRAM development, illustrate how this concept can be extended to fully depleted (FD) SOI, and demonstrate a first circuit application. A memory circuit area reduction of 3 to 10 times can be achieved when compared to DRAM or SRAM reference circuits respectively.