학술논문
Bistable resistive switching in hafnium-silicate thin films
Document Type
Conference
Source
2010 Conference on Optoelectronic and Microelectronic Materials and Devices Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on. :185-186 Dec, 2010
Subject
Language
ISSN
1097-2137
2377-5505
2377-5505
Abstract
We report on the resistive switching mechanism of dc magnetron sputtered hafnium-silicates (Hf x Si 1−x O 2 ) memory thin films. It is observed that the electroforming of these films depends on the thickness and stoichiometry of the insulator as well as on the size of the top electrode (TE). Both high-conducting state (ON) and low-conducting state (OFF) are non-polar and stable. The ratio of resistance of the ON and the OFF state is greater than 10 3 . Both states, performed by dc voltage sweeping and applying short pulses, are stable over 10 4 s at a read out voltage of 0.2V at 85°C, which are all essential properties for further resistive random access memory (RRAM) applications.