학술논문

An 8.3M-pixel 480fps global-shutter CMOS image sensor with gain-adaptive column ADCs and 2-on-1 stacked device structure
Document Type
Conference
Source
2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits) VLSI Circuits (VLSI-Circuits), 2016 IEEE Symposium on. :1-2 Jun, 2016
Subject
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Power, Energy and Industry Applications
Gain
Radiation detectors
CMOS image sensors
System-on-chip
High-speed optical techniques
Optical imaging
Optical sensors
Language
Abstract
A 4K2K 480 fps global-shutter CMOS image sensor has been developed with super 35 mm format. This sensor employs newly developed gain-adaptive column ADCs to attain a dark random noise of 140 µV rms for the full-scale readout of 923 mV. An on-chip online correction of the error between two switchable gains maintains the nonlinearity of output image within 0.18 %. The 16-channel output interfaces with 4.752 Gbps/ch are implemented in 2 diced logic chips stacked on a sensor chip with 38K micro bumps.