학술논문

Improvement of Transport Mobility in Asymmetric V-shaped Double Quantum Well Structure
Document Type
Conference
Source
2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Electron Devices Society Kolkata Chapter (EDKCON), 2022 IEEE International Conference of. :156-159 Nov, 2022
Subject
Components, Circuits, Devices and Systems
Electric potential
Impurities
Scattering
Quantum mechanics
Metals
Doping
Electron mobility
Asymmetric V-shaped potential
DQW
Scattering matrix
Language
Abstract
The improvement of transport electron mobility μ is theoretically reported through a change in well width w in an asymmetric V-shaped double quantum well (AVDQW) structure. The side barriers are doped with different doping concentrations i.e., N d1 (vary) and N d2 (fixed) towards the substrate and surface respectively which produces asymmetry in the structure. An increase in w enhances μ. The magnitude of μ is decided by the alloy disorder scattering but the trend in the variation of μ as a function of N d1 is mainly decided by the impurity scattering.