학술논문
Behaviors of Emission Wavelength Shift in AlInGaN-Based Green Laser Diodes
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(8):870-872 Aug, 2008
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift ( $≫ {\hbox {20}}\ \hbox{nm}$) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.