학술논문

EDA approaches in identifying latchup risks
Document Type
Conference
Source
2016 38th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2016 38th. :1-11 Sep, 2016
Subject
Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Thyristors
Cathodes
Anodes
Layout
Resistors
Pins
Resistance
Language
Abstract
In this paper we review latchup protection verification methods and EDA challenges. We demonstrate complex static and transient latchup scenarios requiring advanced connectivity analysis. Using various EDA verification flows and tools we study latchup problems associated with grounded n-wells, biased n-wells and parasitic thyristors formed during ESD events.