학술논문
Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency
Document Type
Periodical
Author
Source
IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 11(5):877-883 Sep, 2012
Subject
Language
ISSN
1536-125X
1941-0085
1941-0085
Abstract
We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum capacitance limit. In addition, the experimental performance of graphene transistor frequency detectors is demonstrated, showing responsivity of $\hbox{25.2}\,\mu$A/$\mu$ W. The high-frequency performance of these gigahertz devices is enabled by top-gate device fabrication using synthesized graphene transferred onto low capacitance, atomically smooth quartz substrates, affording carrier mobilities as high as 5000 cm$^2$/V $\cdot$s.