학술논문
A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM)
Document Type
Conference
Author
Source
2010 Proceedings of ESSCIRC ESSCIRC, 2010 Proceedings of the. :478-481 Sep, 2010
Subject
Language
ISSN
1930-8833
Abstract
A 4Mbit nonvolatile memory with a Carbon Nanotube (CNT) storage element has been manufactured in a 0.25 µm CMOS process at a production fab. The CNT storage element is integrated in BEOL, requires minimal additional processing steps, and only a single additional mask. The memory can be RESET in 50 nanoseconds and SET in 500 nanoseconds. Demonstrated read access time of the development vehicle is 50 nanoseconds. Write endurance is in excess of 10,000 cycles, and robust data retention has been demonstrated. The CNT storage element is scalable to