학술논문
Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(3):299-306 Mar, 2022
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
Negative-bias-stress and total-ionizing-dose (TID) effects in deeply scaled Ge-gate-all-around (GAA) nanowire (NW) devices are characterized for different biasing conditions. Negative-bias-stress-induced degradation in Ge GAA device originates primarily from the interface- and border-trap generation. Devices stressed at high gate voltage show rapid initial degradation and quick saturation dominated by interface-trap generation. Radiation-induced OFF-state leakage current in Ge GAA NWs increases with dose due to enhanced band-to-band tunneling (BTBT) caused by charge trapping in the shallow trench isolation (STI).