부산대학교 도서관

Devices with internal gain, such as Low Gain Avalanche Diodes (LGADs) demonstrate O(30) ps timing resolution and they play a crucial role in High Energy Physics (HEP) experiment, among other applications. Similarly, resistive silicon devices, such as AC-coupled Low Gain Avalanche Diodes sensors achieve a fine spatial resolution while maintaining the LGADs timing resolution. Devices of both types, with varying gain-layer width and doping characteristics, are produced at Brookhaven National Laboratory. In view of their application to space-based HEP experiments, they are stress-tested against various operating conditions. The performance of these devices is compared with that produced by Hamamatsu. We study how different gain layer widths impact the expected performance of these devices. The challenging operating conditions in outer space impose challenging constraints on the operation performance, against temperature fluctuations, for example. Therefore, devices with different depletion layers and implantation characteristics are stress tested to understand their performance.