학술논문

FAST3: Front-End Electronics to Read Out Thin Ultra-Fast Silicon Detectors for ps Resolution
Document Type
Conference
Source
2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Power, Energy and Industry Applications
Signal Processing and Analysis
Timing jitter
Rails
Power demand
Detectors
Dynamic range
Silicon radiation detectors
Capacitance
Timing Jitter
UFDS
Ultra-Fast electronics
CMOS
Language
Abstract
This paper presents a new version of the FAST family of ASICs and its comparison with the previous version. The new design, FAST3, aims at a timing jitter below 15 picoseconds when coupled to Ultra-Fast Silicon detectors (UFSD). The FAST3 integrated circuit is designed in standard 110 nm CMOS technology; it comes in two different versions: the amplifier-comparator version comprises 20 readout channels, while the amplifier-only version 16 channels. The ASIC power rail is at +1.2 V, and the power consumption for the front-end stage is 2.4 mW/ch and about 5 mW/ch for the output driver. In our tests, the FAST2 ASIC, coupled to a UFDS with a capacitance of 3.4 pF, achieves timing jitters of about 25 ps at an input charge of about 15 fC, while the simulation indicates that the FAST3 jitter will be about 15 ps at the same charge. Furthermore, FAST3 enhances its dynamic range up to 55 fC compared to the 15 fC of FAST2.