부산대학교 도서관

High performance Interdigitated MSM detectors and photoreceivers have been fabricated using a standard refractory gate, ion-implanted MESFET process which has also been used to fabricate complex digital circuits. A shallow implant under the detector is shown to eliminate the undesirable low frequency gain and large dark currents previously observed in these devices. Bandwidths as high as 3.2 GHz have been observed for a detector-preamplifier combination with detector responsivities as high as 0.45 A/W, and dark currents as low as 5 nanoamps.