학술논문

A 2.6V Silicon-on Sapphire CMOS current imbalance sensing circuit for neurostimulation applications
Document Type
Conference
Source
2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS) Circuits and Systems (MWSCAS), 2013 IEEE 56th International Midwest Symposium on. :971-974 Aug, 2013
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Sensors
Capacitors
Mirrors
Electrodes
Educational institutions
Transistors
CMOS integrated circuits
Language
ISSN
1548-3746
1558-3899
Abstract
The occurrence of charge imbalance during the electrical stimulation of neurons has potential for destroying electrodes and damaging cells, which may lead ultimately to the stimulator explantation. In a measurement approach, imbalance can be treated as a DC component of the stimulation current. In this paper, we introduce a circuit solution suitable for measuring DC components associated with stimulation imbalances when voltage swings over three or more times the maximum voltage supply for the technology (3.3V). The proposed topology uses a current mirror connected in series to the stimulator to charge sampling capacitors, isolating the readout input from the high voltage (HV) stimulator output. The circuit was designed for Silanna Silicon-on-Sapphire 0.5µm/FC process, and has two operation modes: continuous integration (or charge sensing, for low stimulation currents), or instant error sampling. Simulation results indicates that the technique is suitable for detecting imbalances