부산대학교 도서관

This paper presents an E-mode HEMT MMIC rectifier based on the design of a class-B power amplifier (PA) using the WIN 150nm PIH1 GaAs process. The PA simulations show over 40% PAE from approximately 9 to 11GHz with an input power of 12 dBm. Using time-reversal duality, a self-synchronous power rectifier (PR) is designed by modifying the PA so that the drain RF output becomes the input, while the RF input at the gate is terminated in a tunable high-reflection coefficient load. The drain bias line is terminated in an optimal DC load. The MMIC is measured with CW and several types of modulated signals. Peak rectifier conversion efficiency in CW operation is measured to be 60% at 10 GHz at 17 dBm input RF power. Peak rectifier efficiency at 10GHz with the same total input power is found to be 62% using a uniformly-distributed AM noise signal with a 50% modulation depth.