학술논문
Improved dislocation model for silicon solar cells: Calculation of dark current
Document Type
Conference
Author
Source
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) PART 2 Photovoltaic Specialists Conference (PVSC), PART 2, 2013 IEEE 39th. :061-067 Jun, 2013
Subject
Language
Abstract
We have extended a previous dislocation model to include the effect of front and back surface recombination velocities in a silicon solar cell. This improved dislocation model uses Green's Function approach to solve three dimensional continuity equation in p and n layer of solar cell. Expressions for saturation current components are derived for different dislocation densities and compared with published experimental results. The modeling results also show the variation of cell parameters with dislocation density.