학술논문

A 0.5-V Energy-Efficient CMOS Temperature Sensor With 97.64 pJ/Conversion for Portable Applications
Document Type
Periodical
Source
IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 24(3):2436-2444 Feb, 2024
Subject
Signal Processing and Analysis
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Robotics and Control Systems
Temperature sensors
Sensors
Frequency conversion
Temperature measurement
Power demand
Wireless sensor networks
Transistors
Energy-efficient
frequency-locked loop (FLL)
subthreshold
switched capacitor
temperature sensor
wireless sensor node
Language
ISSN
1530-437X
1558-1748
2379-9153
Abstract
In this article, an energy-efficient smart temperature sensor based on CMOS technology for portable applications is proposed. The whole sensor works in a subthreshold region to achieve lower power consumption. The front-end circuit of the sensor produces a current in proportion to the absolute temperature using the MOS transistors threshold voltage that changes with the temperature. The current generated by the front-end circuit is then converted into a frequency using the frequency-locked loop (FLL) technique. An asynchronous 12-bit counter is exerted to convert that frequency into a digital value by evaluating the temperature variation in frequency. In addition, to attain better accuracy with power consumption in the nW range, the sensor uses a control circuit that replaces a reference clock generator to provide digital calibration. The sensor has designed in a standard CMOS 180-nm process, and the functionality is analyzed using the postlayout simulation results. At a supply voltage of 0.5 V, the proposed sensor achieves a power consumption of 976.4 nW with an area of 0.0204 mm2. The proposed work attains an accuracy of +0.88/−0.90 °C with two-point calibration across a temperature ranging from −40 °C to 125 °C and a resolution of 0.22 °C. Moreover, the experimental results exhibit that the proposed design achieves an energy per conversion of 97.64 pJ with a figure of merit (FoM) of 4.73 pJ.K2.