부산대학교 도서관

We report on the demonstration of visible/near-IR high-performance photodetector based on exfoliated $\beta $ -Indium selenide (In 2 Se 3 ) on sapphire with a clear signature of band edge in spectral responsivity at a wavelength of ~850–900 nm. Room temperature photoluminescence (PL) measurements also indicated a peak at ~900 nm confirming the band-edge. Devices with inter-digitated metal-semiconductor-metal (MSM) geometry exhibited a responsivity of 3.8 A/W (normalized to device area). A low dark current of 0.80 nA and a photo to dark current ratio of ~52 were measured when illuminated with 650 nm A specific detectivity of $1 \times 10^{10}$ cm Hz $^{0.5}\,\,\text{W}^{-1}$ at 650 nm and $6 \times 10^{8}$ cm Hz $^{0.5}\,\,\text{W}^{-1}$ at the band-edge of 900 nm were estimated. These results indicate the promise of $\beta $ -(In 2 Se 3 ) for visible/near-IR detector applications.