학술논문

Heterogeneous flip-chip assembly of a GaAs C-band power amplifier MMIC using liquid metal vertical interconnects
Document Type
Conference
Source
2010 IEEE MTT-S International Microwave Symposium Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International. :1284-1287 May, 2010
Subject
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Assembly
Gallium arsenide
Power amplifiers
MMICs
Integrated circuit interconnections
Temperature
Inorganic materials
Flip chip
Active circuits
Thermomechanical processes
Gallium Alloys
Interconnects
Language
ISSN
0149-645X
Abstract
A new process utilizing room temperature liquid metals as interconnect material for flip chip assembly of active circuits has been demonstrated. These interconnects form flexible bonds between chips of heterogeneous materials and therefore flip clip assembly built with this configuration is not susceptible to thermomechanical stresses. A prefabricated GaAs MMIC chip is post processed to integrate liquid metal assembly structures. For the operation frequency of the MMIC between 4.9 – 8.5 GHz, average gain of the assembly is greater than 20 dB with an average transition loss of less than 1.8 dB.