학술논문
Measurement of trapping time constants in proton-irradiated silicon pad detectors
Document Type
Conference
Author
Source
2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515) Nuclear science symposium Nuclear Science Symposium Conference Record, 2003 IEEE. 1:439-443 Vol.1 2003
Subject
Language
ISSN
1082-3654
Abstract
Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24 GeV protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq/ /cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.