학술논문
Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs
Document Type
Periodical
Author
Source
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits IEEE J. Explor. Solid-State Comput. Devices Circuits Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on. 1:43-48 Dec, 2015
Subject
Language
ISSN
2329-9231
Abstract
Hysteretic switching with a sub- kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr 0.52 Ti 0.48 O 3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high- k dielectric (HfO 2 ) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub- kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion ( ${I}_{d}\sim $ 100 $\mu \text{A}/\mu \text{m}$ ). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau–Devonshire theory and the Landau–Khalatnikov equation.