학술논문
Surface photovoltage spectroscopy characterization of varied-doping GaAs
Document Type
Conference
Author
Source
2010 8th International Vacuum Electron Sources Conference and Nanocarbon Vacuum Electron Sources Conference and Nanocarbon (IVESC), 2010 8th International. :512-513 Oct, 2010
Subject
Language
Abstract
The quantum efficiency of negative electron affinity (NEA) GaAs photocathodes mainly depends on the performance of GaAs material. Usually, the uniform-doping structure are used in the photoemissive layer of cathodes. To increase quantum efficiency of cathodes, the varied-doping structure are used. The quantum efficiency can be increased by using the varied-doping structure in GaAs material. The electric field exists in the varied-doping GaAs material, that improves the movement of photoexcited electron toward the surface[1].