학술논문

Chemical CeO2-Based Buffer Layers for Fe(Se,Te) Films
Document Type
Periodical
Source
IEEE Transactions on Applied Superconductivity IEEE Trans. Appl. Supercond. Applied Superconductivity, IEEE Transactions on. 32(4):1-5 Jun, 2022
Subject
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Films
Buffer layers
Surface treatment
Surface roughness
Surface morphology
Rough surfaces
Temperature measurement
Buffer layer
chemical solution deposition
coated conductors
iron-based superconductors
metal organic decomposition
polymer-assisted deposition
Zr-doped CeO2
Language
ISSN
1051-8223
1558-2515
2378-7074
Abstract
Among other Fe-based superconductors, Fe(Se,Te) is particularly interesting because of the low structural anisotropy, large upper critical fields, low field dependence of the critical current density and low toxicity. It can also be grown as an epitaxial film on a metallic oriented substrate, making the fabrication of a Fe-based coated conductor (CC) possible. Less strict requirements on the template microstructure allow for the design of a simplified design compared to REBCO CCs. This design requires a buffer layer to promote the oriented growth of the superconducting film and avoid diffusion from the metallic template. In this work, CeO 2 based buffer layers are prepared on single crystals via two chemical deposition techniques, metal organic decomposition (MOD) and polymer assisted deposition (PAD). With the design of a suitable thermal treatment, it is possible to obtain oriented buffers with large flat grains and low values of surface roughness. Fe(Se,Te) films are deposited on these templates via laser deposition, and excellent samples are obtained when a Fe(Se,Te) seed layer is used to favour chemical matching with the buffer: sharp superconducting transitions around 16 K and critical current densities exceeding 1 MA cm − 2 at 4.2 K in self-field are observed. These results are the demonstration of the feasibility of a Fe-based CC architecture, with all the relative advantages concerning process simplification and cost reduction.