학술논문

Design and noise analysis of charge sensitive amplifier for readout of pixelized thin film amorphous silicon sensors
Document Type
Conference
Source
2008 IEEE Nuclear Science Symposium Conference Record Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE. :2946-2951 Oct, 2008
Subject
Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
Bioengineering
Thin film sensors
Semiconductor thin films
Amorphous silicon
Circuit noise
Feedback
Parasitic capacitance
Physics
Radiation detectors
Thin film circuits
Application specific integrated circuits
Language
ISSN
1082-3654
Abstract
Future high-energy physics experiments entail the need to improve the existing detection technologies, as well as develop new ones. Larger luminosities of the new accelerators require greater granularity of tracking detectors, which will be exposed to much higher doses of radiation. One of the newly-investigated solutions for tracking detectors is the Thin Film on ASIC (TFA) technology, which allows combining advantages of Monolithic Active Pixel and Hybrid Pixel technologies. In the paper we present noise analysis of a front-end circuit for readout of a TFA sensor. The circuit is based on a charge sensitive preamplifier built around an un-buffered cascode stage with active reset circuit. The feedback capacitance is reset through a transistor biased with a constant current instead of a voltage controlled reset transistor in order to limit parasitic charge injection into a very small feedback capacitance. Detailed analysis of noise in the reset and the readout phase and design optimization based on the Enz-Krummenacher-Vittoz (EKV) transistor models as well as test results of prototypes are presented.