부산대학교 도서관

We propose for the first time a systematic evaluation of the performance and underlying trade-off of the use of ternary Hf 1−x Al x O y oxides for RRAM application. We show that intermixing HfO 2 and Al 2 O 3 deposition cycles in a standard ALD process not only prevents crystallization of active layer but also significantly improve intrinsic retention and disturb-immunity properties at the expense of a small increase of programming voltage. We attribute this beneficial effect to the reduced Vo diffusivity caused by stronger Al-O bonds as suggested by ab-initio simulations.