학술논문

Silicon nanoelectronics: prospects and promises
Document Type
Conference
Source
1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Frontiers in electronics Frontiers in Electronics, 1997. WOFE '97. Proceedings., 1997 Advanced Workshop on. :119-121 1997
Subject
Components, Circuits, Devices and Systems
Nanoelectronics
Heterojunctions
Zinc compounds
Lattices
Silicon germanium
Germanium silicon alloys
Semiconductor diodes
Kirk field collapse effect
Strontium
Laboratories
Language
Abstract
It is widely recognized that the holy grail for nanoelectronics is a technology that is compatible with standard silicon. We review the current prospects for the development of such a technology. We will discuss the current prospects for Si based heterojunctions including SiGeC, CaF/sub 2/, CeO/sub 2/, SiO/sub 2/ and ZnS to name just a few. Further, we review the status of one device structures, the tunnel switched diode, which can currently be deployed in a number of applications.