학술논문
Demonstration of the Longwave Type-II Superlattice InAs/InAsSb Cascade Photodetector for High Operating Temperature
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(9):1487-1490 Sep, 2022
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
This letter presents InAs $/$ InAsSb-based superlattice (SL) long wavelength (8– $12 \mu \text{m}$ ) range (LWIR) cascade photodetector operating at temperatures > 190 K. The design of the detector resolves the problem of the low quantum efficiency ( QE ) and resistance of the traditional photovoltaic detectors optimized for high temperature (HOT) conditions. The device was deposited by molecular beam epitaxy (MBE) on GaAs substrates with type-II InAs $/$ InAsSb superlattice (T2SLs) absorbers. The constituent stages of the cascade are connected by the low resistance tunnel junctions. Detectivity ( $D^{\ast }$ ) of the unbiased device reaches ~ $6.7\,\,\times10$ 8 cmHz $^{1/2} /\text{W}$ at 210 K, $\lambda $ = $10 \mu \text{m}$ .