학술논문
An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 32(7):1302-1306 Jul, 1985
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
The purpose of this paper is the characterization of Hg 0.3 Cd 0.7 Te avalanche photodiodes at γ = 1.3 µm. These devices are manufactured by tile Société Anonyme des Télécommunications. The multiplication noise for these APD's is measured. The value of the ratiok= β/α is deduced from noise measurements, β and α being, respectively, the hole and electron ionization coefficients. It is shown that these HgCdTe APD's are promising candidates for detectors of 1.3-µm optical communication.