학술논문

A 1.16-V 5.8-to-13.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference Circuit With a Shared Offset-Cancellation Method for Internal Amplifiers
Document Type
Periodical
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 56(1):267-276 Jan, 2021
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Photonic band gap
Temperature sensors
Temperature dependence
Transistors
Temperature measurement
Voltage measurement
Calibration
Amplifier offset voltage reduction
bandgap reference
curvature compensation
Language
ISSN
0018-9200
1558-173X
Abstract
This article introduces an accurate current-mode bandgap reference circuit design with a novel shared offset compensation scheme for its internal amplifiers. This bandgap circuit has been designed to operate over a very wide temperature range from −40 °C to 150 °C. Its output voltage is 1.16 V with a 3.3-V supply voltage. A multi-section curvature compensation method alleviates the error from the bipolar junction transistor’s base–emitter nonlinear voltage dependence on temperature. The bandgap reference circuit contains two operational amplifiers that are utilized to generate proportional-to-absolute-temperature (PTAT) and complementary-to-absolute-temperature (CTAT) current sources. With the implementation of the described shared offset-cancellation methodology, the simulated output inaccuracy introduced by the amplifier is kept to a 5 $\sigma $ offset within ±4.6 $\mu \text{V}$ while allowing to conserve die size and power consumption by preventing that each amplifier is accompanied by its own active auxiliary offset-cancellation circuit. Designed and fabricated in a 130-nm CMOS process technology, the bandgap reference has a measured output voltage shift of less than 1 mV over a −40 °C to 150 °C temperature range and an overall variation of ±8.2 mV across seven measured samples without trimming.