학술논문

Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 55(1):96-130 Jan, 2008
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Transistors
Logic gates
CMOS integrated circuits
Materials
Power dissipation
CMOS technology
Mobile communication
CMOS
double gate
emerging technologies
FinFET
fully depleted silicon-on-insulator (FDSOI)
gate dielectric
germanium
H-K
low power
metallic gate
mobile
mobility
MOSFET
multimedia
multithreshold voltage
nanotechnologies
power dissipation
roadmap
shallow junction
silicon
silicon-on-nothing (SON)
SRAM
static noise margin (SNM)
strain
technology
thin body
thin BOX
variability
32 nm
Language
ISSN
0018-9383
1557-9646
Abstract
The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and density of integration, are subject to other prerogatives related to variability, manufacturability, power consumption/dissipation (mobile products!), mix of varied digital and analog/RF functions (system-on-chip integration), etc. Controllability of variations and static leakage will add to, and in certain products prevail, over speed and density. Implications at all levels are multiple and are more diverse than just speed and smallness. The goal of the authors has been to see the problem globally from the product level and to place its components in their true proportions. Therefore, we will start with drawing the product-level picture and placing it in a historical perspective. Next, we will review the state of the art, the requirements, and solutions at the level of materials, transistor, and technology. Detailed analysis and potential solutions for prolonging CMOS as the leading information technology are presented in this paper.