학술논문
Impact of Gate All Around Architecture in Polarity Based TFET with RF/Analog Analysis
Document Type
Conference
Source
2023 2nd International Conference on Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS) Paradigm Shifts in Communications Embedded Systems, Machine Learning and Signal Processing (PCEMS), 2023 2nd International Conference on. :1-5 Apr, 2023
Subject
Language
Abstract
In today’s scenario, a versatile device to minimise power consumption in resource constraint IoT applications are on high demand. Focusing this, we demonstrate a nanowire TFET device comprising of a gate all around structure for better gate controllability and hetero dielectric as gate oxide. Presented high-k oxide at source side provides a high ON-current i.e. 4.28× 1$0^{-5}$A/$\mu$m and threshold voltage i.e. 0.3 V, which follows ITRS norms for low power devices. Additionally, instead of fundamental doped device, polarity-based concept is incorporated to provide immunity against RDFs and RF analysis is performed to judge its capability for wireless communication and RFIC applications; in which high cutoff frequency of 0.6 PHz and GBP of 60 THz are effectively obtained. Along with this, a high switching speed is also obtained, which is very much preferable for digital as well as analog applications.