학술논문
High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies
Document Type
Conference
Author
Lee, Tsung-En; Chiang, Hung-Li; Chang, Chih-Yu; Su, Yuan-Chun; Chang, Shu-Jui; Wu, Jui-Jen; Lin, Bo-Jiun; Wang, Jer-Fu; Haw, Shu-Chih; Chiu, Shang-Jui; Ching, He-Liang; Lin, Yan-Gu; Yun, Wei-Sheng; Hsu, Chen-Feng; Lee, Hengyuan; Lee, Tung-Ying; Passlack, Matthias; Cheng, Chao-Ching; Chang, Chih-Sheng; Wong, H.-S. Philip; Chang, Wen-Hao; Chang, Meng-Fan; Lin, Yu-Ming; Radu, Iuliana P.
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
For the first time, we demonstrate a transition metal dichalcogenide (TMD) Ferroelectric Field-Effect Transistor (FeFET) with ultra-high endurance (>10 12 measured) and retention time exceeding 10 years. The devices consist of an ultrathin Hf-Zr-based (HZO) ferroelectric deposited by ALD on a stack of AlO x /MoS 2 with process temperature