학술논문
A quantitative analysis of the penetration of SnO/sub 2/ into porous silicon
Document Type
Conference
Author
Source
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings Semiconductor conference Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International. 1:71-74 vol.1 1997
Subject
Language
Abstract
The oxidation of monocrystalline silicon wafer (even at low temperatures /spl sim/500/spl deg/C) through the pores of SnO/sub 2/ sol-gel films deposited on it and the penetration of the Sn into the depth of porous silicon (PS) are quantitatively analyzed by Spectroscopic Ellipsometry (SE), Rutherford Back Scattering (RBS) and Infrared Spectroscopy (IR).