부산대학교 도서관

The admittance- voltage characteristics of MIS structures with TiO 2 (La) dielectric films, have been measured in the 100Hz–100kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100Hz–100kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.