학술논문
Low LO Power V-band CPW Mixer Using GaAs PHEMT
Document Type
Conference
Source
2002 32nd European Microwave Conference Microwave Conference, 2002. 32nd European. :1-4 Sep, 2002
Subject
Language
Abstract
We have designed and fabricated a low LO power V-band CPW mixer using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The V-band mixer was fabricated using the MIMIC process including 0.1-? GaAs PHEMTs and CPW transmission lines. The V-band mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. The low LO power and the high conversion gain achieved in this work is among the best ever reported for a V-band mixer.