학술논문
Realization of silicon carbide MIS capacitors with high-K and high-K stack dielectric
Document Type
Conference
Author
Source
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014
Subject
Language
Abstract
Silicon carbide MIS capacitors with high dielectric constant material and its stack has been designed and characterized using TCAD Sentaurus tools. Interface dipole theory on metal-dielectric interface has been used to determine the work function of gate metal on different dielectric materials. It has been found that in single dielectric with high-K material Si 3 N 4 exhibit better electrical characteristics with fixed oxide charges and interface state density of − 3.06 × 10 12 / cm 2 and 2.9 × 10 12 /cm 2 eV respectively. In high-K stack dielectric, extracted fixed oxide charges is found to be lowest in Si 3 N 4 -SiO2 stack while HfO 2 -SiO 2 stack exhibit lowest interface state density of 3.0 × 10 12 /cm 2 eV. Gate current density of stack dielectric at high electric field is compared with SiO 2 and is found to be lowest in ZrO 2 -SiO 2 stack dielectric.