학술논문

A 10 mW Bluetooth Low-Energy Transceiver With On-Chip Matching
Document Type
Periodical
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 50(12):3077-3088 Dec, 2015
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
System-on-chip
Power demand
Transceivers
DC-DC power converters
Radio frequency
Inductors
Capacitors
Bluetooth low-energy (BLE)
CMOS integrated circuits
Internet of Things (IoT)
ISM band
low-power transceiver
system-on-a-chip (SoC)
wireless sensor networks
Language
ISSN
0018-9200
1558-173X
Abstract
A mass-produced Bluetooth Low-Energy transceiver is presented in classic double frequency VCO architecture fabricated in TSMC 55 nm CMOS. The radio part occupies 2.9 mm $^{2}$ while the complete SoC occupies 5.9 mm$^{2}$ . The transceiver consumes 11 mW when receiving at $-$94 dBm and 10 mW when transmitting at 0 dBm. This is roughly a factor 2 lower than benchmark mass-produced designs. The power consumption is higher than recently published experimental sliding-IF designs, but it does not suffer from their inherent susceptibility to blocking and pulling. Easy application is enabled by a fully integrated single-ended 50 $\Omega $ RFIO and combined Buck- and Boost-mode DC-DC converter.