학술논문
First Demonstration of Ultrafast Laser Annealed Monolithic 3D Gate-All-Around CMOS Logic and FeFET Memory with Near-Memory-Computing Macro
Document Type
Conference
Author
Hsueh, Fu-Kuo; Hung, Je-Min; Huang, Sheng-Po; Huang, Yen-Hsiang; Xue, Cheng-Xin; Shen, Chang-Hong; Shieh, Jia-Min; Chiu, Wen-Cheng; Lin, Chao-Cheng; Chen, Bo-Yuan; Liu, Szu-Ching; Chen, Shih-Wei; Niou, Deng-Yan; Huang, Wen-Hsien; Li, Kai-Shin; Lin, Kun-Kin; Chang, Da-Chiang; Chen, Kun-Ming; Huang, Guo-Wei; Pan, Ci-Ling; Chang, Meng-Fan; Hu, Chenming; Yeh, Wen-Kuan
Source
2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :40.4.1-40.4.4 Dec, 2020
Subject
Language
ISSN
2156-017X
Abstract
For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔV th = 1.2V, more than 10 6 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.