부산대학교 도서관

In this letter, we investigated the effect of magnetron cathode current ( $I_{c})$ during reactive sputtering of In–Ga–Zn–O (a-IGZO) channel layer on properties of metal-semiconductor field-effect transistors with Ru–Si–O Schottky gate electrode. One can observe that as $I_{c}$ increased from 90 to 150 mA channel mobility ( $\mu _{\mathrm {ch_{_{}}}\!})$ and subthreshold swing $(S)$ improved from $\mu _{\mathrm {ch_{_{}}\!}} =7.5$ cm $^{2}$/$\text{V}\cdot \text{s}$ and $S = 580$ V/dec to $\mu _{\mathrm {ch}} =8.8$ cm $^{2}$/$\text{V}\cdot \text{s}$ and $S=420$ V/dec, respectively. This enhancement in transistors performance was attributed to the reduction of charge density in the depletion region of Ru–Si–O/In–Ga–Zn–O Schottky contacts, which we assigned to the densification of a-IGZO films fabricated at higher $I_{c}$ .