학술논문

Using AFM Measurements for Failure Indication During High-Cycle Fatigue Testing of thin Metal Films on MEMS Cantilevers
Document Type
Conference
Source
2021 22nd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2021 22nd International Conference on. :1-9 Apr, 2021
Subject
Aerospace
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Micromechanical devices
Temperature measurement
Films
Surface resistance
Metals
Resonant frequency
Fatigue
Language
Abstract
We use Si MEMS cantilevers as sample carriers to gain high cycle fatigue data for thin metal films by accelerated stress testing. A typical number of 10 7 cycles can thus be achieved in a couple of hours. A closed loop control using laser beam deflection allows to keep the load on the thin film constant while in parallel its degradation is monitored continuously by recording resonance frequency, thin layer electrical resistance and surface roughness, the latter ex situ by AFM. We show a correlation between those three failure indicators and motivate a relationship with the failure parameter within a physics-of-failure based reliability paradigm. The proposed method opens an introspect view on the degradation behaviour of thin metal films as well as a rapid statement on their reliability under vibration loading at different temperatures. In this paper, the method is exemplified on the disruption of $1.2 \mu \mathrm{m}$ thin sputtered Aluminium layers.