부산대학교 도서관

The existing techniques of studying the iron properties in silicon wafers are extended to the case of finished silicon solar cell (SC) at the arbitrary injection level of excess electron-hole pairs in SC. The kinetics of the light-induced processes, in particular the kinetics of open-circuit voltage and short-circuit current, as well as the kinetics of effective lifetime and of the interstitial iron concentration due to the iron-boron pairs dissociation-association reactions are investigated. These studies allow us to determine the total iron concentration in our SCs, and to calculate the time constants of the iron-boron pairs photodissociation and association reactions. The obtained time constants are “fingerprints” of iron in silicon. We conclude that the experimentally observed effects in silicon SCs are activated by iron impurities.