학술논문
Fabrication of Fully-Epitaxial Co$_{{{2}}}$MnSi/Ag/Co$_{{{2}}}$MnSi Giant Magnetoresistive Devices by Elevated Temperature Deposition
Document Type
Periodical
Author
Source
IEEE Transactions on Magnetics IEEE Trans. Magn. Magnetics, IEEE Transactions on. 49(11):5464-5468 Nov, 2013
Subject
Language
ISSN
0018-9464
1941-0069
1941-0069
Abstract
(001)-oriented epitaxial Co$_{{2}}$ MnSi (CMS) films were grown by elevating the substrate temperature during deposition instead of a conventional post-annealing process. The CMS film deposited at 250$^{\circ}$ C showed a very flat surface morphology, large saturation magnetization, and a highly ${\rm L2}_{{1}}$ -ordered crystal structure. A CMS/Ag/CMS giant-magnetoresistive device with CMS layers grown at 250$^{\circ}$ C showed the high magnetoresistance ratio (33%) at room temperature. This ratio was close to that realized in the case of samples fabricated using post-annealing at 500–550$^{\circ}$ C. The elevated temperature deposition for the Heusler electrodes is a promising method to fabricate a practical magnetic read sensor for next generation hard disc drives without high temperature annealing process over 300$^{\circ}$C.