학술논문
Hot Carrier Effect on Power Performance in GaAs PHEMT MMIC Power Amplifiers
Document Type
Conference
Author
Source
IEEE MTT-S International Microwave Symposium Digest, 2005. Microwave Symposium Microwave Symposium Digest, 2005 IEEE MTT-S International. :165-168 Jun, 2005
Subject
Language
ISSN
0149-645X
Abstract
This paper describes hot electron effects on power performance of GaAs PHEMT MMIC power amplifiers (PAs). Hot electrons are generated in PAs under RF-drive at room temperature. A long-term lifetest of PAs under high hot electron stress was performed to investigate the effect of hot-carrier-induced degradation (HCID) on power performance. Accordingly, an empirical model was developed to predict the power performance of V-band PA modules by the end of life (EOL). This information is crucial for system engineers in order to budget sufficient output power so that system can still maintain performance capability by the EOL.