학술논문

Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies
Document Type
Conference
Source
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE. :1-4 Oct, 2010
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Indium phosphide
Heterojunction bipolar transistors
CMOS integrated circuits
Silicon
Compounds
Resistance
Differential amplifiers
Language
ISSN
1550-8781
2374-8443
Abstract
Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in dynamic range and bandwidth of high performance mixed signal circuits.