학술논문
Influence of RTP flash anneal ramp rates on lithography overlay performance on 300 mm integrated wafers
Document Type
Conference
Author
Source
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Ion implantation technology Ion Implantation Technology, 2000. Conference on. :159-162 2000
Subject
Language
Abstract
The influence of RTP with high ramp rates on lithography overlay distortion was investigated in this work using sub-quarter-micron technology on 300 mm wafers. The concentrations of interstitial oxygen was varied, as well as ramp rates and lamp correction tables used to optimise the across-wafer temperature uniformity. The influence of these parameters on the rapid thermal anneal (RTA) performance was studied. Wafer geometry and lithography overlay measurements where used to determine the impact of the material and RTA process parameters to lithography pattern shifts.